Jeong Hwan Han
Cited by
Cited by
Al‐Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors
SK Kim, GJ Choi, SY Lee, M Seo, SW Lee, JH Han, HS Ahn, S Han, ...
Advanced Materials 20 (8), 1429-1435, 2008
Capacitors with an equivalent oxide thickness of< 0.5 nm for nanoscale electronic semiconductor memory
SK Kim, SW Lee, JH Han, B Lee, S Han, CS Hwang
Advanced Functional Materials 20 (18), 2989-3003, 2010
Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots
JH Yoon, JH Han, JS Jung, W Jeon, GH Kim, SJ Song, JY Seok, KJ Yoon, ...
Advanced materials 25 (14), 1987-1992, 2013
Enhanced electrical properties of thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications
SW Lee, OS Kwon, JH Han, CS Hwang
Applied Physics Letters 92 (22), 222903, 2008
Atomic Layer Deposition of SrTiO3 Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors
SW Lee, JH Han, S Han, W Lee, JH Jang, M Seo, SK Kim, C Dussarrat, ...
Chemistry of Materials 23 (8), 2227-2236, 2011
Investigation on the growth initiation of Ru thin films by atomic layer deposition
SK Kim, JH Han, GH Kim, CS Hwang
Chemistry of Materials 22 (9), 2850-2856, 2010
Atomic Layer Deposition of SrTiO3 Films with Cyclopentadienyl-Based Precursors for Metal–Insulator–Metal Capacitors
W Lee, JH Han, W Jeon, YW Yoo, SW Lee, SK Kim, CH Ko, ...
Chemistry of Materials 25 (6), 953-961, 2013
Atomic layer deposition and electrical properties of SrTiO3 thin films grown using Sr (C11H19O2) 2, Ti (Oi-C3H7) 4, and H2O
OS Kwon, SW Lee, JH Han, CS Hwang
Journal of the Electrochemical Society 154 (6), G127, 2007
Growth of p-Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O
JH Han, YJ Chung, BK Park, SK Kim, HS Kim, CG Kim, TM Chung
Chemistry of Materials 26 (21), 6088-6091, 2014
Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films
SH Kim, IH Baek, DH Kim, JJ Pyeon, TM Chung, SH Baek, JS Kim, ...
Journal of Materials Chemistry C 5 (12), 3139-3145, 2017
Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode
JH Han, S Han, W Lee, SW Lee, SK Kim, J Gatineau, C Dussarrat, ...
Applied Physics Letters 99 (2), 022901, 2011
Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor
JH Han, SW Lee, GJ Choi, SY Lee, CS Hwang, C Dussarrat, J Gatineau
Chemistry of Materials 21 (2), 207-209, 2009
Synthesis of SnS thin films by atomic layer deposition at low temperatures
IH Baek, JJ Pyeon, YG Song, TM Chung, HR Kim, SH Baek, JS Kim, ...
Chemistry of Materials 29 (19), 8100-8110, 2017
A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory
GH Kim, KM Kim, JY Seok, HJ Lee, DY Cho, JH Han, CS Hwang
Nanotechnology 21 (38), 385202, 2010
Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials
SW Lee, BJ Choi, T Eom, JH Han, SK Kim, SJ Song, W Lee, CS Hwang
Coordination Chemistry Reviews 257 (23-24), 3154-3176, 2013
Growth of RuO2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4 Precursor and 5% H2 Reduction Gas
JH Han, SW Lee, SK Kim, S Han, CS Hwang, C Dussarrat, J Gatineau
Chemistry of Materials 22 (20), 5700-5706, 2010
Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido …
HY Kim, EA Jung, G Mun, RE Agbenyeke, BK Park, JS Park, SU Son, ...
ACS Applied Materials & Interfaces 8 (40), 26924-26931, 2016
Schottky diode with excellent performance for large integration density of crossbar resistive memory
G Hwan Kim, J Ho Lee, J Hwan Han, S Ji Song, J Yeong Seok, J Ho Yoon, ...
Applied Physics Letters 100 (21), 213508, 2012
Influences of a crystalline seed layer during atomic layer deposition of SrTiO3 thin films using Ti (O-iPr) 2 (thd) 2, Sr (thd) 2, and H2O
SW Lee, JH Han, OS Kwon, CS Hwang
Journal of the Electrochemical Society 155 (11), G253, 2008
Four‐Bits‐Per‐Cell Operation in an HfO2‐Based Resistive Switching Device
GH Kim, H Ju, MK Yang, DK Lee, JW Choi, JH Jang, SG Lee, IS Cha, ...
Small 13 (40), 1701781, 2017
The system can't perform the operation now. Try again later.
Articles 1–20