| Al‐Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors SK Kim, GJ Choi, SY Lee, M Seo, SW Lee, JH Han, HS Ahn, S Han, ... Advanced Materials 20 (8), 1429-1435, 2008 | 313 | 2008 |
| Capacitors with an equivalent oxide thickness of< 0.5 nm for nanoscale electronic semiconductor memory SK Kim, SW Lee, JH Han, B Lee, S Han, CS Hwang Advanced Functional Materials 20 (18), 2989-3003, 2010 | 216 | 2010 |
| Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots JH Yoon, JH Han, JS Jung, W Jeon, GH Kim, SJ Song, JY Seok, KJ Yoon, ... Advanced materials 25 (14), 1987-1992, 2013 | 171 | 2013 |
| Enhanced electrical properties of thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications SW Lee, OS Kwon, JH Han, CS Hwang Applied Physics Letters 92 (22), 222903, 2008 | 137 | 2008 |
| Atomic Layer Deposition of SrTiO3 Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors SW Lee, JH Han, S Han, W Lee, JH Jang, M Seo, SK Kim, C Dussarrat, ... Chemistry of Materials 23 (8), 2227-2236, 2011 | 132 | 2011 |
| Investigation on the growth initiation of Ru thin films by atomic layer deposition SK Kim, JH Han, GH Kim, CS Hwang Chemistry of Materials 22 (9), 2850-2856, 2010 | 75 | 2010 |
| Atomic Layer Deposition of SrTiO3 Films with Cyclopentadienyl-Based Precursors for Metal–Insulator–Metal Capacitors W Lee, JH Han, W Jeon, YW Yoo, SW Lee, SK Kim, CH Ko, ... Chemistry of Materials 25 (6), 953-961, 2013 | 74 | 2013 |
| Atomic layer deposition and electrical properties of SrTiO3 thin films grown using Sr (C11H19O2) 2, Ti (Oi-C3H7) 4, and H2O OS Kwon, SW Lee, JH Han, CS Hwang Journal of the Electrochemical Society 154 (6), G127, 2007 | 72 | 2007 |
| Growth of p-Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O JH Han, YJ Chung, BK Park, SK Kim, HS Kim, CG Kim, TM Chung Chemistry of Materials 26 (21), 6088-6091, 2014 | 70 | 2014 |
| Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films SH Kim, IH Baek, DH Kim, JJ Pyeon, TM Chung, SH Baek, JS Kim, ... Journal of Materials Chemistry C 5 (12), 3139-3145, 2017 | 67 | 2017 |
| Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode JH Han, S Han, W Lee, SW Lee, SK Kim, J Gatineau, C Dussarrat, ... Applied Physics Letters 99 (2), 022901, 2011 | 65 | 2011 |
| Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor JH Han, SW Lee, GJ Choi, SY Lee, CS Hwang, C Dussarrat, J Gatineau Chemistry of Materials 21 (2), 207-209, 2009 | 63 | 2009 |
| Synthesis of SnS thin films by atomic layer deposition at low temperatures IH Baek, JJ Pyeon, YG Song, TM Chung, HR Kim, SH Baek, JS Kim, ... Chemistry of Materials 29 (19), 8100-8110, 2017 | 57 | 2017 |
| A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory GH Kim, KM Kim, JY Seok, HJ Lee, DY Cho, JH Han, CS Hwang Nanotechnology 21 (38), 385202, 2010 | 57 | 2010 |
| Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials SW Lee, BJ Choi, T Eom, JH Han, SK Kim, SJ Song, W Lee, CS Hwang Coordination Chemistry Reviews 257 (23-24), 3154-3176, 2013 | 54 | 2013 |
| Growth of RuO2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4 Precursor and 5% H2 Reduction Gas JH Han, SW Lee, SK Kim, S Han, CS Hwang, C Dussarrat, J Gatineau Chemistry of Materials 22 (20), 5700-5706, 2010 | 53 | 2010 |
| Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido … HY Kim, EA Jung, G Mun, RE Agbenyeke, BK Park, JS Park, SU Son, ... ACS Applied Materials & Interfaces 8 (40), 26924-26931, 2016 | 47 | 2016 |
| Schottky diode with excellent performance for large integration density of crossbar resistive memory G Hwan Kim, J Ho Lee, J Hwan Han, S Ji Song, J Yeong Seok, J Ho Yoon, ... Applied Physics Letters 100 (21), 213508, 2012 | 41 | 2012 |
| Influences of a crystalline seed layer during atomic layer deposition of SrTiO3 thin films using Ti (O-iPr) 2 (thd) 2, Sr (thd) 2, and H2O SW Lee, JH Han, OS Kwon, CS Hwang Journal of the Electrochemical Society 155 (11), G253, 2008 | 41 | 2008 |
| Four‐Bits‐Per‐Cell Operation in an HfO2‐Based Resistive Switching Device GH Kim, H Ju, MK Yang, DK Lee, JW Choi, JH Jang, SG Lee, IS Cha, ... Small 13 (40), 1701781, 2017 | 40 | 2017 |
Cheol Seong HwangProfessor, Department of Materials Science and Engineering, Seoul National UniversityVerified email at snu.ac.kr
