Young Jun Oh
Young Jun Oh
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Harvesting electrical energy from carbon nanotube yarn twist
SH Kim, CS Haines, N Li, KJ Kim, TJ Mun, C Choi, J Di, YJ Oh, JP Oviedo, ...
Science 357 (6353), 773-778, 2017
Systematic study of electronic structure and band alignment of monolayer transition metal dichalcogenides in Van der Waals heterostructures
C Zhang, C Gong, Y Nie, KA Min, C Liang, YJ Oh, H Zhang, W Wang, ...
2D Materials 4 (1), 015026, 2016
Computational search for direct band gap silicon crystals
IH Lee, J Lee, YJ Oh, S Kim, KJ Chang
Physical review B 90 (11), 115209, 2014
Electronic structure of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors and implications for device behavior
WH Han, YJ Oh, KJ Chang, JS Park
Physical Review Applied 3 (4), 044008, 2015
Ab initio materials design using conformational space annealing and its application to searching for direct band gap silicon crystals
IH Lee, YJ Oh, S Kim, J Lee, KJ Chang
Computer Physics Communications 203, 110-121, 2016
Dipole-allowed direct band gap silicon superlattices
YJ Oh, IH Lee, S Kim, J Lee, KJ Chang
Scientific reports 5 (1), 18086, 2015
The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors
YJ Oh, HK Noh, KJ Chang
Science and Technology of Advanced Materials 16 (3), 034902, 2015
Hybrid functional versus quasiparticle calculations for the Schottky barrier and effective work function at TiN/HfO interface
YJ Oh, AT Lee, HK Noh, KJ Chang
Physical Review B—Condensed Matter and Materials Physics 87 (7), 075325, 2013
Direct band gap carbon superlattices with efficient optical transition
YJ Oh, S Kim, IH Lee, J Lee, KJ Chang
Physical Review B 93, 085201, 2016
Ab initio study of boron segregation and deactivation at Si/SiO2 interface
YJ Oh, JH Hwang, HK Noh, J Bang, B Ryu, KJ Chang
Microelectronic engineering 89, 120-123, 2012
Effects of interface bonding and defects on boron diffusion at Si/SiO2 interface
GM Kim, YJ Oh, KJ Chang
Journal of applied physics 114 (22), 2013
First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2
YJ Oh, HK Noh, KJ Chang
Physica B: Condensed Matter 407 (15), 2989-2992, 2012
Atomically thin transition metal layers: Atomic layer stabilization and metal-semiconductor transition
J Hwang, YJ Oh, J Kim, MM Sung, K Cho
Journal of Applied Physics 123 (15), 2018
Three-dimensional buckled honeycomb boron lattice with vacancies as an intermediate phase on the transition pathway from α-B to γ-B
WH Han, YJ Oh, DH Choe, S Kim, IH Lee, KJ Chang
NPG Asia Materials 9 (7), e400-e400, 2017
Electronic transport across metal-graphene edge contact
C Gong, C Zhang, YJ Oh, W Wang, G Lee, B Shan, RM Wallace, K Cho
2D Materials 4 (2), 025033, 2017
First principles study of the Mn-doping effect on the physical and chemical properties of mullite-family Al 2 SiO 5
Q Wang, C Liang, Y Zheng, N Ashburn, YJ Oh, F Kong, C Zhang, Y Nie, ...
Physical Chemistry Chemical Physics 19 (36), 24991-25001, 2017
The effect of Al segregation on Schottky barrier height and effective work function in TiAl/TiN/HfO2 gate stacks
GM Kim, YJ Oh, KJ Chang
Journal of Physics D: Applied Physics 49 (27), 275104, 2016
Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces
HK Noh, YJ Oh, KJ Chang
Physica B: Condensed Matter 407 (15), 2907-2910, 2012
Suppression of boron segregation by interface Ge atoms at SiGe/SiO2 interface
CH Lee, GM Kim, YJ Oh, KJ Chang
Current Applied Physics 14 (11), 1557-1563, 2014
Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO {sub 2} and Ni/HfO {sub 2} interfaces
HK Noh, YJ Oh, KJ Chang
Physica. B, Condensed Matter 407, 2012
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