| Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors HK Noh, KJ Chang, B Ryu, WJ Lee Physical Review B 84 (11), 115205, 2011 | 295 | 2011 |
| Defect properties and -type doping efficiency in phosphorus-doped ZnO WJ Lee, J Kang, KJ Chang Physical Review B 73 (2), 024117, 2006 | 246 | 2006 |
| Formation of dopant-pair defects and doping efficiency in B-and P-doped silicon nanowires CY Moon, WJ Lee, KJ Chang Nano letters 8 (10), 3086-3091, 2008 | 37 | 2008 |
| Electronic structure of oxygen vacancy in crystalline InGaO3 (ZnO) m WJ Lee, B Ryu, KJ Chang Physica B: Condensed Matter 404 (23-24), 4794-4796, 2009 | 30 | 2009 |
| Structural and electronic properties of crystalline InGaO3 (ZnO) m WJ Lee, EA Choi, J Bang, B Ryu, KJ Chang Applied Physics Letters 93 (11), 2008 | 29 | 2008 |
| Electronic structure of phosphorus dopants in ZnO WJ Lee, J Kang, KJ Chang Physica B: Condensed Matter 376, 699-702, 2006 | 27 | 2006 |
| p-Type doping and compensation in ZnO WJ Lee, J Kang, KJ Chang Journal of the Korean Physical Society 53 (1), 196-201, 2008 | 20 | 2008 |
| Chemical bonding effect of Ge atoms on B diffusion in Si J Bang, J Kang, WJ Lee, KJ Chang, H Kim Physical Review B 76 (6), 064118, 2007 | 17 | 2007 |
| Enhanced electron-mediated ferromagnetism in Co-doped ZnO nanowires E Choi, WJ Lee, KJ Chang Journal of Applied Physics 108 (2), 2010 | 15 | 2010 |
| Hole doping effect on ferromagnetism in Mn-doped ZnO nanowires N Tsogbadrakh, EA Choi, WJ Lee, KJ Chang Current applied physics 11 (2), 236-240, 2011 | 9 | 2011 |
