Jaehyun Lee
Title
Cited by
Cited by
Year
Analysis of drain-induced barrier rising in short-channel negative-capacitance FETs and its applications
J Seo, J Lee, M Shin
IEEE Transactions on Electron Devices 64 (4), 1793-1798, 2017
432017
Density functional theory based simulations of silicon nanowire field effect transistors
M Shin, WJ Jeong, J Lee
Journal of Applied Physics 119 (15), 154505, 2016
212016
p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge-and Si-Channel Devices
W Choi, J Lee, M Shin
Electron Devices, IEEE Transactions on, 1-1, 2014
132014
NESS: New flexible nano-electronic simulation software
S Berrada, T Dutta, H Carrillo-Nunez, M Duan, F Adamu-Lema, J Lee, ...
2018 International Conference on Simulation of Semiconductor Processes and …, 2018
112018
A physics-based investigation of pt-salt doped carbon nanotubes for local interconnects
J Liang, R Ramos, J Dijon, H Okuno, D Kalita, D Renaud, J Lee, ...
2017 IEEE International Electron Devices Meeting (IEDM), 35.5. 1-35.5. 4, 2017
82017
Simulation study of germanium p-type nanowire Schottky barrier MOSFETs
J Lee, M Shin
IEEE electron device letters 34 (3), 342-344, 2013
72013
Simulation of the impact of ionized impurity scattering on the total mobility in Si nanowire transistors
T Sadi, C Medina-Bailon, M Nedjalkov, J Lee, O Badami, S Berrada, ...
Materials 12 (1), 124, 2019
62019
Performance Assessment of III-V Channel Ultra-Thin-Body Schottky-Barrier MOSFETs
J Lee, M Shin
IEEE Electron Device Letter 35 (7), 726-728, 2014
62014
Variability study of MWCNT local interconnects considering defects and contact resistances-Part I: pristine MWCNT
R Chen, J Liang, J Lee, VP Georgiev, R Ramos, H Okuno, D Kalita, ...
IEEE Transactions on Electron Devices, 2018
5*2018
Understanding electromigration in Cu-CNT composite interconnects: A multiscale electrothermal simulation study
J Lee, S Berrada, F Adamu-Lema, N Nagy, VP Georgiev, T Sadi, J Liang, ...
IEEE Transactions on Electron Devices 65 (9), 3884-3892, 2018
52018
Effects of pH and ion concentration in a phosphate buffer solution on the sensitivity of silicon nanowire bioFETs
J Lee, M Shin, CG Ahn, CS Ah, CW Park, GY Sung, M Shin, CS Ah, ...
Journal of the Korean Physical Society 55 (4), 1621-1625, 2009
52009
Investigation of Pt-salt-doped-standalone-multiwall carbon nanotubes for on-chip interconnect applications
J Liang, R Chen, R Ramos, J Lee, H Okuno, D Kalita, V Georgiev, ...
IEEE Transactions on Electron Devices 66 (5), 2346-2352, 2019
42019
Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs
V Thirunavukkarasu, J Lee, T Sadi, VP Georgiev, FA Lema, ...
Superlattices and Microstructures 111, 649-655, 2017
42017
The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulations
J Lee, S Berrada, J Liang, T Sadi, VP Georgiev, A Todri-Sanial, D Kalita, ...
2017 International Conference on Simulation of Semiconductor Processes and …, 2017
42017
Comprehensive study of cross-section dependent effective masses for silicon based gate-all-around transistors
O Badami, C Medina-Bailon, S Berrada, H Carrillo-Nunez, J Lee, ...
Applied Sciences 9 (9), 1895, 2019
32019
Variability Predictions for the Next Technology Generations of n-type SixGe1− x Nanowire MOSFETs
J Lee, O Badami, H Carrillo-Nuņez, S Berrada, C Medina-Bailon, T Dutta, ...
Micromachines 9 (12), 643, 2018
32018
Challenges and Progress on Carbon Nanotube Integration for BEOL Interconnects
B Uhlig, A Dhavamani, N Nagy, K Lilienthal, R Liske, R Ramos, J Dijon, ...
2018 IEEE International Interconnect Technology Conference (IITC), 16-18, 2018
32018
Negative capacitance logic device, clock generator including the same and method of operating clock generator
MC Shin, JH Lee, DH Kang, JB Seo, WJ Jeong
US Patent 9,484,924, 2016
32016
Simulation study of the scaling behavior of top-gated carbon nanotube field effect transistors
M Shin, J Lee, C Ahn
Journal of nanoscience and nanotechnology 8 (10), 5389-5392, 2008
32008
Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism
C Medina-Bailon, T Sadi, M Nedjalkov, H Carrillo-Nuņez, J Lee, ...
IEEE Electron Device Letters 40 (10), 1571-1574, 2019
22019
The system can't perform the operation now. Try again later.
Articles 1–20