Tae Won Noh
Tae Won Noh
Center for Correlated Electron systems, Institute for Basic Science. Department of Physics & Astronomy Seoul National University
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Lanthanum-substituted bismuth titanate for use in non-volatile memories
BH Park, BS Kang, SD Bu, TW Noh, J Lee, W Jo
Nature 401 (6754), 682-684, 1999
23361999
Novel J eff= 1/2 Mott state induced by relativistic spin-orbit coupling in Sr 2 IrO 4
BJ Kim, H Jin, SJ Moon, JY Kim, BG Park, CS Leem, J Yu, TW Noh, C Kim, ...
Physical review letters 101 (7), 076402, 2008
12822008
Ferromagnetism Induced by Clustered Co in Co-Doped Anatase T i O 2 Thin Films
JY Kim, JH Park, BG Park, HJ Noh, SJ Oh, JS Yang, DH Kim, SD Bu, ...
Physical review letters 90 (1), 017401, 2003
4512003
Dimensionality-Controlled Insulator-Metal Transition and Correlated Metallic State in Transition Metal Oxides (, 2, and )
SJ Moon, H Jin, KW Kim, WS Choi, YS Lee, J Yu, G Cao, A Sumi, ...
Physical review letters 101 (22), 226402, 2008
4102008
Dimensionality-Controlled Insulator-Metal Transition and Correlated Metallic State in Transition Metal Oxides (, 2, and )
SJ Moon, H Jin, KW Kim, WS Choi, YS Lee, J Yu, G Cao, A Sumi, ...
Physical review letters 101 (22), 226402, 2008
4102008
Experimental study of the three-dimensional ac conductivity and dielectric constant of a conductor-insulator composite near the percolation threshold
Y Song, TW Noh, SI Lee, JR Gaines
Physical Review B 33 (2), 904, 1986
3631986
Frequency Shifts of the Internal Phonon Modes in La 0.7 Ca 0.3 Mn O 3
KH Kim, JY Gu, HS Choi, GW Park, TW Noh
Physical review letters 77 (9), 1877, 1996
3621996
Random circuit breaker network model for unipolar resistance switching
SC Chae, JS Lee, S Kim, SB Lee, SH Chang, C Liu, B Kahng, H Shin, ...
Advanced Materials 20 (6), 1154-1159, 2008
3612008
Polarization Relaxation Induced by a Depolarization Field in Ultrathin Ferroelectric Capacitors
DJ Kim, JY Jo, YS Kim, YJ Chang, JS Lee, JG Yoon, TK Song, TW Noh
Physical review letters 95 (23), 237602, 2005
3012005
Polarization relaxation induced by a depolarization field in ultrathin ferroelectric BaTiO 3 capacitors
DJ Kim, JY Jo, YS Kim, YJ Chang, JS Lee, JG Yoon, TK Song, TW Noh
Physical review letters 95 (23), 237602, 2005
3012005
Giant flexoelectric effect in ferroelectric epitaxial thin films
D Lee, A Yoon, SY Jang, JG Yoon, JS Chung, M Kim, JF Scott, TW Noh
Physical Review Letters 107 (5), 057602, 2011
2772011
Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface
YW Yin, JD Burton, YM Kim, AY Borisevich, SJ Pennycook, SM Yang, ...
Nature materials 12 (5), 397-402, 2013
2582013
Formation of Co nanoclusters in epitaxial thin films and their ferromagnetism
DH Kim, JS Yang, KW Lee, SD Bu, TW Noh, SJ Oh, YW Kim, JS Chung, ...
Applied Physics Letters 81 (13), 2421-2423, 2002
2572002
Differences in nature of defects between and
BH Park, SJ Hyun, SD Bu, TW Noh, J Lee, HD Kim, TH Kim, W Jo
Applied Physics Letters 74 (13), 1907-1909, 1999
2551999
Mid-infrared properties of a VO 2 film near the metal-insulator transition
HS Choi, JS Ahn, JH Jung, TW Noh, DH Kim
Physical Review B 54 (7), 4621, 1996
2491996
Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects
D Lee, SH Baek, TH Kim, JG Yoon, CM Folkman, CB Eom, TW Noh
Physical Review B 84 (12), 125305, 2011
2432011
Occurrence of both unipolar memory and threshold resistance switching in a NiO film
SH Chang, JS Lee, SC Chae, SB Lee, C Liu, B Kahng, DW Kim, TW Noh
Physical review letters 102 (2), 026801, 2009
2272009
Determination of electronic band structures of CaMnO 3 and LaMnO 3 using optical-conductivity analyses
JH Jung, KH Kim, DJ Eom, TW Noh, EJ Choi, J Yu, YS Kwon, Y Chung
Physical Review B 55 (23), 15489, 1997
2101997
Polaron Absorption in a Perovskite Manganite
KH Kim, JH Jung, TW Noh
Physical review letters 81 (7), 1517, 1998
2051998
Resistive switching phenomena: A review of statistical physics approaches
JS Lee, S Lee, TW Noh
Applied Physics Reviews 2 (3), 031303, 2015
2032015
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