Robert M. Wallace

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Christopher HinkleUniversity of Notre Dame, Electrical EngineeringVerified email at nd.edu
Stephen McDonnellUniversity of VirginiaVerified email at virginia.edu
Rafik AddouOregon State UniversityVerified email at oregonstate.edu
Bruce GnadeSMUVerified email at smu.edu
Luigi ColomboUniversity of Texas at DallasVerified email at utdallas.edu
Eric M VogelHightower Professor of Materials Science and Engineering, Georgia Institute of TechnologyVerified email at mse.gatech.edu
Barry BrennanAtlantic Technological UniversityVerified email at atu.ie
Hong DongNankai UniversityVerified email at nankai.edu.cn
Rodney RuoffThe IBS CMCM, Dept. of Chemistry, Dept. of MS&ESchool of Energy and ChEng,Verified email at unist.ac.kr
Manuel Quevedo-lopezUniversity of Texas at DallasVerified email at utdallas.edu
Francisco Servando Aguirre-TostadoCentro de Investigación en Materiales Avanzados, S.C., Unidad MonterreyVerified email at cimav.edu.mx
Joshua A. RobinsonProf. MatSE; Center for 2DLM; ATOMIC; 2D Crystal Consort.; The Pennsylvania State UniversityVerified email at psu.edu
Cheng GongAssociate Professor, University of MarylandVerified email at umd.edu
Santosh KCSan Diego State UniversityVerified email at sdsu.edu
pk hurleyTyndall National Institute, University College CorkVerified email at tyndall.ie
Dmitry ZhernokletovIntermolecular Inc.Verified email at intermolecular.com
Lanxia ChengStaff Engineer_EMD ElectronicsVerified email at emdgroup.com
Chadwin D. YoungUniversity of Texas at DallasVerified email at utdallas.edu
Bongki LeeTechnology Development Engineer, GLOBALFOUNDRIESVerified email at globalfoundries.com
Chenxi ZhangUniversity of Texas at DallasVerified email at utdallas.edu

Robert M. Wallace

University of Texas at Dallas

Verified email at utdallas.edu - Homepage

Electronic Materials Surfaces Interfaces


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High-κ gate dielectrics: Current status and materials properties considerations GD Wilk, RM Wallace, JM Anthony Journal of applied physics 89 (10), 5243-5275, 2001	7802	2001
Carbon-based supercapacitors produced by activation of graphene Y Zhu, S Murali, MD Stoller, KJ Ganesh, W Cai, PJ Ferreira, A Pirkle, ... science 332 (6037), 1537-1541, 2011	6686	2011
Hafnium and zirconium silicates for advanced gate dielectrics GD Wilk, RM Wallace, JM Anthony Journal of Applied Physics 87 (1), 484-492, 2000	1369	2000
The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2 A Pirkle, J Chan, A Venugopal, D Hinojos, CW Magnuson, S McDonnell, ... Applied Physics Letters 99 (12), 2011	1157	2011
The role of oxygen during thermal reduction of graphene oxide studied by infrared absorption spectroscopy M Acik, G Lee, C Mattevi, A Pirkle, RM Wallace, M Chhowalla, K Cho, ... The Journal of Physical Chemistry C 115 (40), 19761-19781, 2011	1017	2011
Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors C Gong, H Zhang, W Wang, L Colombo, RM Wallace, K Cho Applied Physics Letters 103 (5), 2013	926	2013
Near-unity photoluminescence quantum yield in MoS₂ M Amani, DH Lien, D Kiriya, J Xiao, A Azcatl, J Noh, SR Madhvapathy, ... Science 350 (6264), 1065-1068, 2015	922	2015
Defect-Dominated Doping and Contact Resistance in MoS₂ S McDonnell, R Addou, C Buie, RM Wallace, CL Hinkle ACS nano 8 (3), 2880-2888, 2014	903	2014
Zirconium and/or hafnium oxynitride gate dielectric RM Wallace, RA Stoltz, GD Wilk US Patent 6,013,553, 2000	840	2000
The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS₂ Interfaces C Gong, L Colombo, RM Wallace, K Cho Nano letters 14 (4), 1714-1720, 2014	814	2014
High-K materials and metal gates for CMOS applications J Robertson, RM Wallace Materials Science and Engineering: R: Reports 88, 1-41, 2015	787	2015
Two-dimensional gallium nitride realized via graphene encapsulation ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ... Nature materials 15 (11), 1166-1171, 2016	752	2016
Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon GD Wilk, RM Wallace Applied Physics Letters 74 (19), 2854-2856, 1999	676	1999
MoS₂ P-type Transistors and Diodes Enabled by High Work Function MoO_x Contacts S Chuang, C Battaglia, A Azcatl, S McDonnell, JS Kang, X Yin, M Tosun, ... Nano letters 14 (3), 1337-1342, 2014	650	2014
Hole Selective MoO_x Contact for Silicon Solar Cells C Battaglia, X Yin, M Zheng, ID Sharp, T Chen, S McDonnell, A Azcatl, ... Nano letters 14 (2), 967-971, 2014	630	2014
GaAs interfacial self-cleaning by atomic layer deposition CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ... Applied Physics Letters 92 (7), 2008	492	2008
Manganese Doping of Monolayer MoS₂: The Substrate Is Critical K Zhang, S Feng, J Wang, A Azcatl, N Lu, R Addou, N Wang, C Zhou, ... Nano letters 15 (10), 6586-6591, 2015	462	2015
First-principles study of metal–graphene interfaces C Gong, G Lee, B Shan, EM Vogel, RM Wallace, K Cho Journal of Applied Physics 108 (12), 2010	459	2010
Highly Scalable, Atomically Thin WSe₂ Grown via Metal–Organic Chemical Vapor Deposition SM Eichfeld, L Hossain, YC Lin, AF Piasecki, B Kupp, AG Birdwell, ... ACS nano 9 (2), 2080-2087, 2015	458	2015
Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures YC Lin, RK Ghosh, R Addou, N Lu, SM Eichfeld, H Zhu, MY Li, X Peng, ... Nature Communications 6, 7311, 2015	455	2015

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