42.3: Transparent ZnO thin film transistor for the application of high aperture ratio bottom emission AM‐OLED display SHK Park, M Ryu, CS Hwang, S Yang, C Byun, JI Lee, J Shin, SM Yoon, ... SID Symposium Digest of Technical Papers 39 (1), 629-632, 2008 | 666 | 2008 |
21.2: Al and Sn‐Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back‐Plane DH Cho, S Yang, SHK Park, C Byun, SM Yoon, JI Lee, CS Hwang, ... SID Symposium Digest of Technical Papers 40 (1), 280-283, 2009 | 637 | 2009 |
Challenge to Future Displays: Transparent AM-OLED Driven by Peald Grown ZnO TFT SH Ko Park, CS Hwang, CW Byun, MK Ryu, JI Lee, HY Chu, KI Cho, ... 한국정보디스플레이학회: 학술대회논문집, 1249-1252, 2007 | 587 | 2007 |
Transparent and photo‐stable ZnO thin‐film transistors to drive an active matrix organic‐light‐emitting‐diode display panel SHK Park, CS Hwang, M Ryu, S Yang, C Byun, J Shin, JI Lee, K Lee, ... Advanced Materials 21 (6), 678-682, 2009 | 421 | 2009 |
Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor H Oh, SM Yoon, MK Ryu, CS Hwang, S Yang, SHK Park Applied physics letters 97 (18), 2010 | 368 | 2010 |
Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing E Fortunato, R Barros, P Barquinha, V Figueiredo, SHK Park, CS Hwang, ... Applied Physics Letters 97 (5), 2010 | 336 | 2010 |
METHOD OF MANUFACTURING ZnO SEMICONDUCTOR LAYER FOR ELECTRONIC DEVICE AND THIN FILM TRANSISTOR INCLUDING THE ZnO SEMICONDUCTOR LAYER SH Park, CS Hwang, HY Chu, JI Lee US Patent App. 11/970,737, 2008 | 282 | 2008 |
Thin-film transistors based on p-type Cu2O thin films produced at room temperature E Fortunato, V Figueiredo, P Barquinha, E Elamurugu, R Barros, ... Applied Physics Letters 96 (19), 2010 | 236 | 2010 |
Light effects on the bias stability of transparent ZnO thin film transistors JH Shin, JS Lee, CS Hwang, SHK Park, WS Cheong, M Ryu, CW Byun, ... Etri Journal 31 (1), 62-64, 2009 | 225 | 2009 |
Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors WithandGate Dielectrics KH Ji, JI Kim, YG Mo, JH Jeong, S Yang, CS Hwang, SHK Park, MK Ryu, ... IEEE electron device letters 31 (12), 1404-1406, 2010 | 210 | 2010 |
Ultrathin film encapsulation of an OLED by ALD SHK Park, J Oh, CS Hwang, JI Lee, YS Yang, HY Chu Electrochemical and solid-state letters 8 (2), H21, 2005 | 210 | 2005 |
Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer S Yang, DH Cho, MK Ryu, SHK Park, CS Hwang, J Jang, JK Jeong Applied physics letters 96 (21), 2010 | 181 | 2010 |
Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature DH Cho, S Yang, C Byun, J Shin, MK Ryu, SHK Park, CS Hwang, ... Applied Physics Letters 93 (14), 2008 | 171 | 2008 |
Comparison of adaptive techniques to predict crop yield response under varying soil and land management conditions SJ Park, CS Hwang, PLG Vlek Agricultural Systems 85 (1), 59-81, 2005 | 151 | 2005 |
High performance thin film transistor with cosputtered amorphous Zn–In–Sn–O channel: Combinatorial approach MK Ryu, S Yang, SHK Park, CS Hwang, JK Jeong Applied Physics Letters 95 (7), 2009 | 128 | 2009 |
Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistors MK Ryu, S Yang, SHK Park, CS Hwang, JK Jeong Applied Physics Letters 95 (17), 2009 | 126 | 2009 |
Transparent ZnO-TFT arrays fabricated by atomic layer deposition SHK Park, CS Hwang, HY Jeong, HY Chu, KI Cho Electrochemical and Solid-State Letters 11 (1), H10, 2007 | 125 | 2007 |
Ultraflexible and transparent electroluminescent skin for real-time and super-resolution imaging of pressure distribution B Lee, JY Oh, H Cho, CW Joo, H Yoon, S Jeong, E Oh, J Byun, H Kim, ... Nature Communications 11 (1), 663, 2020 | 118 | 2020 |
Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics JM Lee, IT Cho, JH Lee, WS Cheong, CS Hwang, HI Kwon Applied Physics Letters 94 (22), 2009 | 116 | 2009 |
Fully transparent non‐volatile memory thin‐film transistors using an organic ferroelectric and oxide semiconductor below 200 C SM Yoon, S Yang, C Byun, SHK Park, DH Cho, SW Jung, OS Kwon, ... Advanced Functional Materials 20 (6), 921-926, 2010 | 111 | 2010 |